2020 3D-PEIM Keynote Speakers

Session 2 Additive Manufacturing Keynote

Developments of high power blue diode laser systems for laser metal deposition and selective laser melting in additive manufacturing

Abstract
Laser metal deposition and selective laser melting are materials processing technologies with lasers in additive manufacturing. High power blue diode lasers for them have been developed in new energy and industrial technology development organization (NEDO) project, Japan. The blue diode laser has an advantage for laser metal deposition and selective laser melting of pure copper. Since the absorption rate of blue light to pure copper is much higher than that of usual diode laser and fiber laser whose wavelengths are in near-infrared light range. A multiple-beam processing head with the lasers has been also developed for precision laser metal deposition.

Biography
Masahiro Tsukamoto, Joining and Welding Research Institute, Osaka University

Masahiro Tsukamoto got Ph.D. from the Osaka University Graduate School of Engineering in 1994. His research field was the nonlinear scattering of high intensity laser in expanding plasmas from fuel shell of laser nuclear fusion.

He was assistant professor of Joining and Welding Research Institute, Osaka University from 1994. Professor Tsukamoto was awarded a postdoctoral fellowship for research abroad by the Japan Society for the Promotion of Science. So from 1996 to 1998, he was a visiting scientist at Lawrence Livermore National Laboratory, USA

He was Associate Professor of Osaka University from 2006 to 2017 at which time he become a Professor of Osaka University.

Professor Tsukamoto was project leader of “Research and development of the laser coating technology to realize high value-added design and fabrication” in “Innovative Design/Manufacturing Technologies” of Cross-ministerial Strategic Innovation Promotion Program (2014-2018). He is now Research and Development Manager of the “Development of high intensity blue diode laser for next-generation additive manufacturing” in new energy and industrial technology development organization (NEDO) project “Research and development of next generation laser processing technology (2016-2020).


Session 5 Multiphysics Design and Tools Keynote

Speaker and Title – To Be Announced


Session 6 Materials Keynote

Superior reliability of power electronic packages with Die Top Systems (DTS®). Why a wire-based technology solution outperforms clip based interconnections.

Abstract
DTS® maximizes power density and reliability through superior performance of sintering and Cu bonding technology. High power semiconductors that are packaged with sintered silver and copper from both sides can perform more reliable at higher temperatures due to the best thermal conductivity and lowest degradation risk compared to solder. At the same time, thick Cu bond wires enable higher current carrying capability at a lower homologous temperature than Al wires can provide. Coupled with a one-step sinter process and a well-established and extremely flexible wire bonding process, the DTS® outperforms clip-based interconnections, especially when it comes to design changes. Proven in many Power Cycling Tests, the DTS® even exceeds performance when Molybdenum is used.

Biography
Michael Joerger, Heraeus Electronics, Germany

Since 2015 Dr. Michael Jörger is heading the global Innovation organization as Executive Vice President at Heraeus Electronics headquartered in Hanau, Germany.  Prior to that, he was responsible for R&D in the Electronic Materials and Thick Film Division. Before starting his career at Heraeus, Michael worked as Business Manager and R&D Manager at Rolls-Royce plc. in Derby, UK for 7 years. He has successfully launched products for the Electronics, Renewable Energy, and Aerospace industry.  Michael Jörger majored in chemistry at the University of Karlsruhe, Germany, and he received his Ph.D. in Materials Sciences with a focus on ceramics from ETH, Zurich, Switzerland.

 


Session 7 Manufacturing Technologies Keynote

The Technology Race in Power Electronics Packaging: A Rolling Start?

Abstract
Technology diversity for power electronics packaging today is at a high, even though a plethora of these just popping up from all over the world while involving different industries. High-density interconnections with a high degree of design flexibility, superior thermal conduction as well as low-cost are the main criteria to be successful in the competition for next generation traction inverters, SMPS or DC fast chargers.  Summing up decades of research and development for the packaging of power devices, Mr. Frauwallner will talk about state-of-the-art solutions as well as tech trends and innovations. AT&S’s keynote speech will present the company’s strategic view on 3D integration of active and passive components into FR4-based organic laminate substrates to meet challenging requirements for thermal and electrical performance.

Biography
Rainer Frauwallner AT & S Austria Technologie & Systemtechnik Aktiengesellschaft, Austria

Rainer Frauwallner has worked across multiple technical functions in AT&S related to active and passive component embedding into organic laminate substrates. Within these roles, he was responsible for technical sales, concept development, and product analysis for projects realized with AT&S ECP® technology. In his current position, he evaluates the requirements of strategic applications and defines gaps to available technologies in order to further improve products and enable new solutions for customers. Besides his international experience in automotive and industrial electronics from former employments, he is holding a master’s degree in “Advanced Electronic Engineering” from the University of Applied Sciences FH Joanneum in Kapfenberg, Austria.


Session 8 Keynote

Reliability aspects of 3D integrated power devices

Abstract
The need for higher switching frequencies, higher operating temperatures, and lower volume of power devices increases remarkably due to the increased demand of products with higher power densities, lower weight, and smoother power output [1] [2]. Especially, wide band gap materials are needed to fulfill all requirements, but cannot reach their full potential with state of the art planar package integration [1]. To obtain reduced parasitics within the power loop, to reduce the devices footprint, improve heat removal and ensure package reliability, a three dimensional integration of power devices can be utilized [3] [4] [5] [6] [7]. The potential of 3D integration is enormous and essential in order to push power electronic devices to their theoretical limit. Recent developments could not only obtain improved switching proficiencies [7]. In addition, remarkable increase in active power cycling lifetime and capability to withstand critical overload conditions could be realized [2]. Finally, the establishment of advanced package technologies relies on several reliability and robustness tests. Test methods, including new methods for wide bandgap devices, are proposed. Some successful accomplishments are documented up to now [5] [8].

References

[1] S. Buetow und R. Herzer, „Characterization of GaN-HEMT in Cascode Topology and Comparison with State of the Art-Power Devices,“ Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs, Chicago, USA May 13-17 2012.

[2] U. Scheuermann, „Reliability of Planar SKiN Interconnect Technology,“ CIPS, Nuremberg, Germany March 6 – 8 2012.

[3] P. Beckedahl, M. Hermann, M. Kind, M. Knebel, J. Nascimento und A. Wintrich, „Performance comparison of traditional packaging technologies to a novel bond wire less all sintered power module,“ PCIM Europe, Nuremberg, Germany 17 – 19 May 2011.

[4] H. A. Mantooth und S. S. Ang, „Packaging Architectures for Silicon Carbide Power Electronic Modules,“ The International Power Electronics Conference IPEC-Niigata, 2018.

[5] P. Weidner und M. Kaspar, „Planar Interconnect Technology for Power Module,“ CIPS, Nuremberg, Germany 6 – 8 March 2012.

[6] M. Schmid, J. Pforr und G. Elger, „Power Electronic Package for Double Sided Cooling Utilizing Tile-Level Assembly,“ PCIM Europe, Nuremberg, Germany 16 – 18 May 2017.

Biography

Dr. Josef Lutz, Professor at Chemnitz University of Technology, Germany

Josef Lutz was from 1983 with Semikron Elektronik, in Nuremberg. He invented the Controlled Axial Lifetime (CAL) diode. In 1999 he graduated as Ph.D. in electrical engineering at the University of Ilmenau. Since August 2001, he is Professor for Power Electronics and EMC at the Chemnitz University of Technology. He is a senior member of IEEE and serves in several international committees. He is a member of the advisory board of the Journal Microelectronics Reliability. His leading publication is the book “Semiconductor Power Devices – Physics, Characteristics, Reliability”, printed in German (2006, 2012), in English (2011, 2018) and in Chinese (2013). 


Session 10 Heterogeneous Integration Keynote

Development of High Performance SiC Power Module

Abstract
The strong request of CO2 exhaust reduction leads to the strong motivations of realizing the power electronics having the characteristics of lower loss, higher controllability, smaller volume, and lighter weight. Based on this situation, the request for realizing the low loss power module, which shows the high performance such as high switching speed and/or high temperature operation, has been increasing. The power module using SiC is one of the most promising technology for the realization. However, the high performance SiC power module can only be realized by introducing a lot of other technologies such as passive components and their packaging.

In this presentation, the technologies used for the high performance SiC power modules are introduced. In addition, 1.2kV-100A class SiC power module which equipped with embedded passives (resistors and capacitors) and whose maximum junction temperature is 250℃ is introduced as an example.

Biography
Dr. Hiroshi Yamaguchi, National Institute of Advanced Industrial Science and Technology (AIST), Japan.

He received his Ph.D. degree in Electrical and Electronic Engineering from the Tokyo Institute of Technology in 1994. After completing his Ph.D. degree, he was a research associate at the Tokyo Institute of Technology. In 1996, he moved to Electrotechnical Laboratory (ETL). He is now a deputy director of the Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST).

His research interests are energy management system, electric power system stabilization, and energy saving technologies using power electronics.


 

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